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NE3509M14 Datasheet, PDF (1/12 Pages) Renesas Technology Corp – N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier | |||
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Data Sheet
NE3509M14
R09DS0011EJ0100
Rev.1.00
N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier Jan 21, 2011
FEATURES
⢠Super low noise figure and high associated gain high isolation
NF = 0.4 dB TYP., Ga = 18.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 2 GHz
⢠4-pin lead-less minimold (M14, 1208 PKG) package
APPLICATIONS
⢠Satellite radio (SDARS, DMB, DAB, etc.) antenna LNA
⢠GPS antenna LNA
⢠Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number Order Number
Package
Quantity Marking
NE3509M14-T3 NE3509M14-T3-A 4-pin lead-less 10 kpcs/reel
zR
minimold
(M14, 1208 PKG)
(Pb-Free)
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3509M14
Supplying Form
⢠Embossed tape 8 mm wide
⢠Pin 1 (Drain), Pin 4 (Source)
face the perforation side of
the tape
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage
VGS
â3.0
Drain Current
ID
IDSS
Gate Current
IG
200
Total Power Dissipation Note
Ptot
150
Channel Temperature
Tch
+150
Storage Temperature
Tstg
â65 to +150
Note: Mounted on 1.08 cm2 Ã 1.0 mm (t) glass epoxy PWB
Unit
V
V
mA
μA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 1 of 10
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