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| N0800S_15 Datasheet, PDF (1/5 Pages) Renesas Technology Corp – NPN SILICON EPITAXIAL TRANSISTOR | |||
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N0800S
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
ï· Complements to N0800R.
ï· VCEO = 80 V
ï· IC(DC) = 0.3 A
ï· Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM)
PRODUCT LINEUP
Part Number
N0800S-T1-AT
Packing
Tape 3000p/reel
Package Name
SOT-23F
Package Code
PVSF0003ZA-A
Data Sheet
R07DS0727EJ0100
Rev.1.00
Mar 30, 2012
Mass [TYP.]
0.0126g
ABSOLUTE MAXIMUM RATINGS (Ta = 25ï°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
80
V
Collector to Emitter Voltage VCEO
80
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC(DC)
0.3
A
Collector Current (pulse) *1
IC(pulse)
0.5
A
Total Power Dissipation
PT1
Total Power Dissipation *2
PT2
0.2
W
1.0
W
Junction Temperature
Tj
150
ï°C
Storage Temperature
Tstg
ï55 to ï«150
ï°C
Note *1. PW ï£ 10 ms, Duty Cycle ï£ 50%
*2. FR-4 board size 2500 mm2 ï´ 1.6 mm, t ï£ 5 sec
ELECTRICAL CHARACTERISTICS (Ta = 25ï°C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
Note *1. Pulsed
Symbol
ICBO
IEBO
hFE1*1
hFE2*1
VCE(sat)*1
VBE(sat)*1
VBE*1
fT
Cob
Condition
VCB = 80 V, IE = 0
VEB = 5.0 V, IC = 0
VCE = 1.0 V, IC = 50 mA
VCE = 2.0 V, IC = 300 mA
IC = 300 mA, IB = 30 mA
IC = 300 mA, IB = 30 mA
VCE = 6.0 V, IC = 10 mA
VCE = 6.0 V, IE = -10 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
MIN.
90
30
600
TYP.
200
80
0.15
0.86
645
100
6
MAX.
100
100
400
0.6
1.2
700
Unit
nA
nA
V
V
mV
MHz
pF
hFE Classification
Marking
hFE1
EM
90 to 180
EL
135 to 270
EK
200 to 400
R07DS0727EJ0100 Rev.1.00
Mar 30, 2012
Page 1 of 5
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