N0400P_12 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – N0400P

Preliminary Data Sheet
N0400P
MOS FIELD EFFECT TRANSISTOR
R07DS0500EJ0200
Rev.2.00
Aug 19, 2011
Description
The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications.
Features
• 2.5 V drive available
• Super low on-state resistance
RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)
RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A)
• Built-in gate protection diode
Ordering Information
PART NUMBER
N0400P-ZK-E1-AY ^Note
N0400P-ZK-E2-AY ^Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
−40
V
m12
V
m15
A
m45
A
25
W
1.0
W
150
°C
−55 to +150
°C
−16
A
25
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −20 V, RG = 25 Ω, VGS = −12 → 0 V
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
5.0
°C/W
125
°C/W
PACKAGE
TO-252 (MP-3ZK)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R07DS0500EJ0200 Rev.2.00
Aug 19, 2011
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