M5M5V416CWG-55HI Datasheet, PDF (1/9 Pages) Renesas Technology Corp – 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

2003.08.21 Ver. 7.0
RENESAS LSIs
M5M5V416CWG -55HI, -70HI
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
DESCRIPTION
FEATURES
The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs - Single 2.7~3.6V power supply
organized as 262144-words by 16-bit, f abricated by Renesas's - Small stand-by current: 0.2µA (3.00V, ty p.)
high-perf ormance 0.18µm CMOS technology .
- No clocks, No ref resh
The M5M5V416C is suitable f or memory applications where a
- Data retention supply v oltage =2.0V
simple interf acing , battery operating and battery backup are the - All inputs and outputs are TTL compatible.
important design objectiv es.
- Easy memory expansion by S1#, S2, BC1# and BC2#
M5M5V416CWG is packaged in a CSP (chip scale package),
- Common Data I/O
with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball) - Three-state outputs: OR-tie capability
and ball pitch of 0.75mm. It giv es the best solution f or
- OE# prev ents data contention in the I/O bus
a compaction of m ounting area as well as f lexibility of wiring
- Process technology : 0.18µm CMOS
pattern of printed circuit boards.
- Package: 48ball 7.0mm x 8.5mm CSP
Version,
Operating
temperature
Part name
I-version
-40 ~ +85°C
M5M5V416CWG -55HI
M5M5V416CWG -70HI
Power
Supply
Access time
max.
Stand-by c urrent (µA)
* Typical(3.0V)
Ratings (max. @3.6V)
25°C 40°C ^Voltage 25°C 40°C 70°C 85°C
Activ e
current
Icc1
(3.0V, ty p.)
2.7 ~ 3.6V
55ns
70ns
3.0V 1.0 2.0 10 20
30mA
0.2 0.4 3.3V 1.5 2.5 10
20
(10MHz)
5mA
3.6V 2.5 4.0 10
20
(1MHz)
PIN CONFIGURATION
* Typical parameter indicates the value for the center
of distribution, and not 100% tested.
(TOP VIEW)
1 23 456
A ^BC1# OE#
A0
A1
A2
S2
B ^{DQ16 BC2#}
A3
A4
S1#
DQ1
C ^{DQ14 DQ15}
A5
A6
DQ2 DQ3
D ^{GND DQ13}
A17
A7
DQ4 VCC
E ^VCC
DQ12
NC or
GND
A16
DQ5 GND
F ^{DQ11 DQ10 A14}
A15
DQ7 DQ6
G ^DQ9
N.C.
A12
A13
W#
DQ8
H ^NC
A8
A9
A10
A11
N.C.
Outline: 48FJA
NC: No Connection
*Don't connect E3 ball to voltage level more than 0V.
Pin
Function
A0 ~ A17 Address input
DQ1 ~ DQ16 ^{Data input / output}
S1#
Chip select input 1
S2
Chip select input 2
W#
Write control input
OE#
BC1#
Output enable input
Lower By te (DQ1 ~ 8)
BC2# ^{Upper By te (DQ9 ~ 16)}
Vcc
Power supply
GND
Ground supply
1