M5M5256DFP Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

RENESAS LSIs
M5M5256DFP,VP -70G,-70GI,-70XG
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5256DFP,VP is 262,144-bit CMOS static RAMs
organized as 32,768-words by 8-bits which is f abricated using
high-perf ormance 3 poly silicon CMOS technology . The use of
resistiv e load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough f or battery back-up application. It is ideal f or the memory
sy stems which require simple interf ace.
Especially the M5M5256DVP are packaged in a 28-pin thin small
outline package.
FEATURE
Ty pe
Access _Oprating ^{Power supply current}
time _Temperature Activ e
(max)
(max)
Stand-by
(max)
M5M5256DFP,VP
70ns
-70G
M5M5256DFP,VP _70ns
-70GI
M5M5256DFP,VP
-70XG
70ns
0~70°C
-40~85°C
0~70°C
20µA
(Vcc= 5.5V)
45mA
(Vcc= 5.5V)
12µA
(Vcc= 3.6V)
40µA
(Vcc= 5.5V)
25mA
(Vcc= 3.6V)
24µA
(Vcc= 3.6V)
5µA
(Vcc= 5.5V)
2.4µA
(Vcc= 3.6V)
0.05µA
(Vcc= 3.0V Typical)
•Single 3.0~5.5V power supply
•No clocks, no ref resh
•Data-Hold on +2.0V power supply
•Directly TTL compatible : all inputs and outputs
•Three-state outputs : OR-tie capability
•/OE prev ents data contention in the I/O bus
•Common Data I/O
•Battery backup capability
•Low stand-by current .......... 0.05µA(ty p.)
PACKAGE
M5M5256DFP
M5M5256DVP
: 28 pin 450 mil SOP
: 28pin 8 X 13.4 mm² TSOP
APPLICATION
Small capacity m emory units
PIN CONFIGURATION (TOP VIEW)
A14 ¹
A12 2
A7 ³
A6 ⁴
A5 ⁵
A4 6
A3 ⁷
A2 ⁸
A1 ⁹
A0 10
DQ1 11
DQ2 12
DQ3 ¹³
GND 14
28 _Vcc
27 /W
26 _A13
25 A8
24 A9
23 A11
22 /OE
21 _A10
20 /S
19 DQ8
18 DQ7
17 DQ6
16 ^DQ5
15 DQ4
Outline 28P2W-C (FP)
22 /OE
23 A11
24 A9
25 A8
26 _A13
27 _/W
28 _Vcc
1 _A14
2 A12
3 A7
4 _A6
5 A5
6 A4
7 _A3
M5M5256DVP
A10 21
/S 20
DQ8 ¹⁹
DQ7 ¹⁸
DQ6 ¹⁷
DQ5 ¹⁶
DQ4 ¹⁵
GND 14
DQ3 ¹³
DQ2 ¹²
DQ1 ¹¹
A0 10
A1 ⁹
A2 ⁸
Outline 28P2C-A (VP)
1