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M5M5256DFP-70LL Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
RENESAS LSIs
M5M5256DFP,VP-55LL,-70LL,-70LLI,
-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5256DFP,VP is 262,144-bit CMOS static RAMs
organized as 32,768-words by 8-bits which is f abricated using
high-perf ormance 3 poly silicon CMOS technology . The use of
resistiv e load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough f or battery back-up application. It is ideal f or the memory
sy stems which require simple interf ace.
Especially the M5M5256DVP are packaged in a 28-pin thin small
outline package.
FEATURE
Ty pe
Access Oprating Power supply current
time Temperature Activ e Stand-by
(max)
(max) (max)
PIN CONFIGURATION (TOP VIEW)
A14 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
DQ1 11
DQ2 12
DQ3 13
GND 14
Outline
28 Vcc
27 /W
26 A13
25 A8
24 A9
23 A11
22 /OE
21 A10
20 /S
19 DQ8
18 DQ7
17 DQ6
16 DQ5
15 DQ4
28P2W-C (FP)
M5M5256DFP,VP-55LL
M5M5256DFP,VP-70LL
55ns
70ns
0~70°C
20µA
(Vcc= 5.5V)
M5M5256DFP,VP-70LLI 70ns
-40~85°C
50mA
(Vcc= 5.5V)
40µA
(Vcc= 5.5V)
M5M5256DFP,VP-55XL
M5M5256DFP,VP-70XL
55ns
70ns
0~70°C
•Single +5V power supply
•No clocks, no ref resh
•Data-Hold on +2.0V power supply
•Directly TTL compatible : all inputs and outputs
•Three-state outputs : OR-tie capability
•/OE prev ents data contention in the I/O bus
•Common Data I/O
•Battery backup capability
•Low stand-by current .......... 0.05µA(ty p.)
5µA
(Vcc= 5.5V)
0.05µA
(Vcc= 3.0V,
Typical)
22 /OE
23 A11
24 A9
25 A8
26 A13
27 /W
28 Vcc
1 A14
2 A12
3 A7
4 A6
5 A5
6 A4
7 A3
M5M5256DVP
A10 21
/S 20
DQ8 19
DQ7 18
DQ6 17
DQ5 16
DQ4 15
GND 14
DQ3 13
DQ2 12
DQ1 11
A0 10
A1 9
A2 8
Outline 28P2C-A (VP)
PACKAGE
M5M5256DFP
M5M5256DVP
: 28 pin 450 mil SOP
: 28pin 8 X 13.4 mm2 TSOP
APPLICATION
Small capacity m emory units
1