HVL147M Datasheet, PDF (1/5 Pages) Renesas Technology Corp – Silicon Epitaxial Trench Pin Diode for Antenna Switching

HVL147M
Silicon Epitaxial Trench Pin Diode for Antenna Switching
REJ03G0394-0300
Rev.3.00
Jan 20, 2006
Features
• Adopting the trench structure improves low capacitance.(C = 0.31 pF max)
• Low forward resistance. (rf = 1.5 Ω max)
• Low operation current.
• Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design.
Ordering Information
Type No.
HVL147M
Laser Mark
N
Package Name
TEFP
Package Code
PUSF0002ZA-A
Pin Arrangement
Cathode mark
Mark
1
•₂
1. Cathode
2. Anode
Rev.3.00 Jan 20, 2006 page 1 of 4