HSU227 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for High Speed Switching

HSU227
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0612-0200
(Previous: ADE-208-779A)
Rev.2.00
Apr 28, 2005
Features
• Low capacitance. (C = 3.0 pF max)
• Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSU227
Laser Mark
S3
Package Name
URP
Package Code
(Previous Code)
PTSP0002ZA-A
(URP)
Pin Arrangement
Cathode mark
Mark
1 _S3 2
1. Cathode
2. Anode
Rev.2.00 Apr 28, 2005 page 1 of 4