HSG2002 Datasheet, PDF (1/25 Pages) Renesas Technology Corp – SiGe HBT High Frequency Medium Power Amplifier

HSG2002
SiGe HBT
High Frequency Medium Power Amplifier
Features
• High Transition Frequency
f_T = 28.5 GHz typ.
• Low Distortion and Excellent Linearity
P1dB at output = +25 dBm typ. f = 5.8 GHz
• High Collector to Emitter Voltage
V_CEO = 5 V
• Ideal for 2 GHz, 5 GHz Band applications. e.g WLAN, Digital cordless phone.
REJ03G0444-0300
Rev.3.00
Jun 21, 2006
Outline
Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)
9
7
65
2002
4
8
123
9
4
5
6
7
3
2
1
8
Note: Marking is “2002”.
1. Collector
2. Collector
3. Collector
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: Value on PCB (40 x 40 x 1.0mm)
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
Tj
Tstg
Ratings
12
5
1.5
500
1.4^Note
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
W
°C
°C
Rev.3.00 Jun 21, 2006 page 1 of 24