HSG2001 Datasheet, PDF (1/25 Pages) Renesas Technology Corp – SiGe NPN Epitaxial High Frequency Medium Power Amplifier

HSG2001
SiGe NPN Epitaxial
High Frequency Medium Power Amplifier
Features
• High Transition Frequency
f_T = 20 GHz typ.
• Low Distortion and Excellent Linearity
IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ. f = 1.8 GHz
• High Collector to Emitter Voltage
V_CEO = 5 V
• Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
Outline
CMPAK-4
Note: Marking is “VF-”.
2
3
1
4
1. Emitter
2. Collector
3. Emitter
4. Base
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
V_CBO
V_CEO
V_EBO
I_C
Pc
Junction temperature
Tj
Storage temperature
Tstg
Note: Value on PCB ( FR-4 : 20 x 20 x 1.0mm Double side )
Ratings
13
5
1.5
100
450^Note
150
–55 to +150
REJ03G0168-0200Z
Rev.2.00
Apr.20.2004
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.2.00, Apr.20.2004, page 1 of 24