HSG1003 Datasheet, PDF (1/38 Pages) Renesas Technology Corp – High Frequency Low Noise Amplifier

HSG1003
SiGeHBT
High Frequency Low Noise Amplifier
Features
• High power gain and low noise figure ;
• MSG = 21 dB typ. , NF = 0.65 dB typ. at V_CE = 2 V,I_C = 5 mA, f = 1.8 GHz
MSG = 19 dB typ. , NF = 0.75 dB typ. at V_CE = 2 V,I_C = 5 mA, f = 2.4 GHz
MSG = 14 dB typ. , NF = 1.2 dB typ. at V_CE = 2 V,I_C = 10 mA, f = 5.8 GHz
• Transition Frequency
f_T = 36 GHz typ. at f = 1 GHz
• V_CEO = 3.5 V
• Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications.
Outline
Note: Marking is "VE-".
CMPAK-4
2
3
1
4
1. Emitter
2. Collector
3. Emitter
4. Base
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
V_CBO
Collector to emitter voltage
V_CEO
Emitter to base voltage
V_EBO
Collector current
I_C
Collector power dissipation
Pc
Pc^note1
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )
Ratings
8
3.5
1.2
35
100
250
150
–55 to +150
REJ03G0197-0200
Rev.2.00
Jan.25.2005
(Ta = 25°C)
Unit
V
V
V
mA
mW
mW
°C
°C
Rev.2.00, Jan.25.2005, page 1 of 37