HSG1002 Datasheet, PDF (1/38 Pages) Renesas Technology Corp – SiGeHBT High Frequency Low Noise Amplifier

HSG1002
SiGeHBT
High Frequency Low Noise Amplifier
Features
• High power gain and low noise figure ;
• MSG = 21 dB typ. , NF = 0.7 dB typ. at V_CE = 2 V,I_C = 5 mA, f = 1.8 GHz
MSG = 20 dB typ. , NF = 0.8 dB typ. at V_CE = 2 V,I_C = 5 mA, f = 2.4 GHz
MSG = 16 dB typ. , NF = 1.2 dB typ. at V_CE = 2 V,I_C = 10 mA, f = 5.8 GHz
• Transition Frequency
f_T = 38 GHz typ. at f = 1 GHz
• V_CEO = 3.5 V
• Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications.
Outline
MFPAK-4
REJ03G0196-0100Z
Rev.1.00
Apr.12.2004
3
2
VE-
4
1
Note: Marking is "VE-".
2
3
1
4
1. Emitter
2. Collector
3. Emitter
4. Base
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
V_CBO
V_CEO
V_EBO
I_C
Pc
Pc^note1
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )
Ratings
8
3.5
1.2
35
80
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
mW
°C
°C
Rev.1.00, Apr.12.2004, page 1 of 37