HS54095_09 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HS54095
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 13.5 Ω typ. (at I_D = 0.1 A, V_GS = 10 V, Ta = 25°C)
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92(1))
G
321
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
Pch
θ_ch-a
Tch
Tstg
REJ03G1668-0200
Rev.2.00
Dec 10, 2009
D
1. Gate
2. Drain
3. Source
S
Ratings
600
±30
0.2
0.8
0.2
0.8
0.75
166.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
REJ03G1668-0200 Rev.2.00 Dec 10, 2009
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