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HITK0302MP_13 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching | |||
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HITK0302MP
30V, 2.7A, 115mïmax.
Silicon N Channel MOS FET
Power Switching
Features
ï· Low on-resistance
RDS(on) = 92 mï typ (VGS = 10 V, ID = 1.3 A)
ï· Low drive current
ï· High speed switching
ï· 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
Note: Marking is âGVâ.
1
2
Preliminary Datasheet
R07DS0483EJ0200
Rev.2.00
May 09, 2013
3
D
G
1. Source
2
2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(Pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. When using the glass epoxy board (FR-4: 40 ï´ 40 ï´ 1 mm)
Ratings
30
ï ï ï±20
2.7
5
2.7
0.8
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
ï°C
ï°C
R07DS0483EJ0200 Rev.2.00
May 09, 2013
Page 1 of 6
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