HITJ0201MP_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – –20V, –3.4A, 69mmax. Silicon P Channel MOS FET Power Switching

HITJ0201MP
–20V, –3.4A, 69mmax.
Silicon P Channel MOS FET
Power Switching
Features
 Low on-resistance
R_DS(on) = 53 m typ (V_GS = –4.5 V, I_D = –1.8 A)
 Low drive current
 High speed switching
 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “UV”.
Preliminary Datasheet
R07DS0473EJ0200
Rev.2.00
May 09, 2013
3
D
G
1. Source
2
2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
Pch_(pulse) ^Note2
Tch
Storage temperature
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
–20
+8 / –12
–3.4
–10
–3.4
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
C
C
R07DS0473EJ0200 Rev.2.00
May 09, 2013
Page 1 of 6