HAT3015R Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3015R
Silicon N/P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8 ^{7 65}
2
G
1 ²³⁴
78
DD
4
G
S1
MOS1
Nch
56
DD
S3
MOS2
Pch
REJ03G1368-0400
Rev.4.00
Apr 04, 2006
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Nch
Pch
Drain to source voltage
Gate to source voltage
V_DSS
200
–200
V_GSS
±15
±15
Drain current
Drain peak current
I_D
0.5
I_{D(pulse)Note1}
2
–0.25
–1
Body-drain diode reverse drain current
I_DR
0.5
Channel dissipation
Pch ^Note2
1.3
Pch ^Note3
2
–0.25
1.3
2
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.4.00 Apr 04, 2006 page 1 of 3