HAT2281C_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2281C
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
R_DS(on) = 109 mΩ typ.(at V_GS = 4.5 V)
• Low drive current
• High density mounting
• 2.5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
Data Sheet
R07DS1185EJ0300
(Previous: REJ03G1328-0200)
Rev.3.00
Mar 19, 2014
23 45
DD DD
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to Source voltage
V_DSS
Gate to Source voltage
V_GSS
Drain current
Drain peak current
I_D
I_D
Note1
(pulse)
Body - Drain diode reverse Drain current
Channel dissipation
I_DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
Ratings
60
±12
2
8
2
850
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
R07DS1185EJ0300 Rev.3.00
Mar 19, 2014
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