HAT2279H Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2279H
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 9.5 mΩ typ. (at V_GS = 10 V)
• Lead Free
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
D
5
1 ²³⁴
4
G
SSS
123
REJ03G1464-0200
Rev.2.00
Jul 05, 2006
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
θch-C
Tch
Tstg
Ratings
80
±20
30
120
30
25
83
25
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Jul 05, 2006 page 1 of 7