HAT2215R_17 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2215R
Silicon N Channel Power MOSFET
High Speed Power Switching
Features
 Low on-resistance
 Capable of 4.5 V gate drive
 High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8 ^{7 65}
1 ²³⁴
78
DD
56
DD
2
4
G
G
S1
MOS1
S3
MOS2
Data Sheet
REJ03G0486-0301
Rev.3.01
Jan 20, 2017
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
80
Gate to source voltage
VGSS
20
Drain current
ID
3.4
Drain peak current
ID(pulse)Note1
20.4
Reverse drain current
IDR
3.4
Channel dissipation
Pch ^Note2
1.5
Channel dissipation
Pch ^Note3
2.2
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW  10 s, duty cycle  1%
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
C
C
REJ03G0486-0301 Rev.3.01
Jan 20, 2017
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