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HAT2207C Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching | |||
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HAT2207C
Silicon N Channel MOS FET
Power Switching
Features
⢠Low on-resistance
RDS(on) = 100 m⦠typ. (at VGS = 4.5 V)
⢠Low drive current.
⢠High density mounting
⢠2.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
REJ03G1239-0600
Rev.6.00
Feb 28, 2006
23 45
DD DD
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse)Note1
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. When using the glass epoxy board. (FR4 40 Ê· 40 Ê· 1.6 mm)
Ratings
20
±12
1.5
6
1.5
790
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.6.00 Feb 28, 2006 page 1 of 6
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