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HAT2201R_16 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching
HAT2201R
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 8 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 34 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
REJ03G0233-0301Z
Rev.3.01
Nov.30.2016
Rev.3.01, Nov.30.2016, page 1 of 7