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HAT2198 Datasheet, PDF (1/9 Pages) – | |||
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HAT2198R
Silicon N Channel Power MOS FET
Power Switching
Features
⢠High speed switching
⢠Capable of 4.5 V gate drive
⢠Low drive current
⢠High density mounting
⢠Low on-resistance
RDS(on) = 7.2 m⦠typ. (at VGS = 10 V)
Outline
SOP-8
5 678
D DDD
4
G
SS S
12 3
8 7 65
1 234
REJ03G0062-020
Rev.2.0
6HS.8.20
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
14
112
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-a Note3
14
14
19.6
2.5
50
Channel temperature
Tch
150
Storage temperature
Tstg
â55 to +150
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. Value at Tch = 25°C, Rg ⥠50 â¦
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ⤠10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.0, 6HS..20, page 1 of 7
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