HAT2179R Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2179R
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
REJ03G1570-0100
Rev.1.00
Jul 06, 2007
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
V_DSS
600
V_GSS
±30
Drain current
Drain peak current
I_D
0.7
I_D
Note1
(pulse)
2.0
Body-drain diode reverse drain current
I_DR
0.7
Body-drain diode reverse drain peak current
I_DR
Note1
(pulse)
2.0
Channel dissipation
Pch ^Note2
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C
°C
REJ03G1570-0100 Rev.1.00 Jul 06, 2007
Page 1 of 3