HAT2134H Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2134H
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_{DS (on)} = 2.3 mΩ typ. (at V_GS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
4
G
1234
5
D
S SS
1 23
REJ03G1190-0300
(Previous: ADE-208-1578A)
Rev.3.00
Sep 07, 2005
1, 2, 3
4
5
Source
Gate
Drain
Rev.3.00 Sep 07, 2005 page 1 of 3