HAT2035R Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2035R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
78
56
DD
DD
8 ^{7 65}
2
4
1 ²³⁴
G
G
S1
MOS1
S3
MOS2
REJ03G1242-0100
Rev.1.00
Jun. 09, 2005
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
V_DSS
150
Gate to Source voltage
V_GSS
±15
Drain current
Drain peak current
I_D
0.5
I_{D(pulse)Note1}
2
Body-Drain diode reverse Drain current
I_DR
0.5
Channel dissipation
P_ch ^Note2
1
Channel dissipation
P_ch ^Note3
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.1.00 Jun. 09, 2005, page 1 of 3