HAF2014 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOSFET Series Power Switching

HAF2014
Silicon N Channel MOS FET Series
Power Switching
REJ03G1140-0300
(Previous: ADE-208-953)
Rev.3.00
Apr 27, 2006
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shut-down circuit
• Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
4
123
G
Gate resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.3.00 Apr 27, 2006 page 1 of 7