H7P1002DL Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Power Switching

H7P1002DL, H7P1002DS
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 85 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source
REJ03G1601-0100
Rev.1.00
Nov 16, 2007
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
D
123
H7P0601DL
123
G
H7P0601DS
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_AP ^Note3
E_AR ^Note3
Pch ^Note2
Tch
Tstg
Rating
–100
±20
–15
–60
–15
–12
14.4
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
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