H7P0601DL Datasheet, PDF(1/11 Page) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Power Switching

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H7P0601DL Datasheet, PDF (1/11 Pages) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Power Switching

H7P0601DL, H7P0601DS

Silicon P Channel MOS FET

High Speed Power Switching

Features

â¢ Low on-resistance

RDS(on) = 40 mâ¦ typ.

â¢ Low drive current

â¢ 4.5 V gate drive device can driven from 5 V source

Outline

REJ03G0044-0100Z

Rev.1.00

Aug.05.2003

DPAK-2

DPAK-S

12 3

H7P0601DS

H7P0601DL

1. Gate

2. Drain

3. Source

4. Drain

Rev.1.00, Aug.05.2003, page 1 of 10

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