H7N1004FN Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET HigH-Speed Power Switching

H7N1004FN
Silicon N-Channel MOSFET
High-Speed Power Switching
Features
• Low on-resistance
• R_DS(on) = 25 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
G
1
23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
I_AP ^{Note 3}
E_AR ^{Note 3}
Pch ^{Note 2}
Tch
Tstg
REJ03G1593-0100
Rev.1.00
Oct 23, 2007
D
1. Gate
2. Drain
3. Source
S
Value
100
±20
25
100
25
15
22.5
25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
REJ03G5193-0100 Rev.1.00 Oct 23, 2007
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