H7N1004FM_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N-Channel MOSFET High-Speed Power Switching

H7N1004FM
Silicon N-Channel MOSFET
High-Speed Power Switching
Features
 Low on-resistance
 R_DS(on) = 25 m typ.
 Low drive current
 Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM )
1G
123
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. Value at Tch = 25C, Rg  50 
Symbol
V_DSS
V_GSS
I_D
I_D (pulse)^Note1
I_DR
I_AP ^{Note 3}
E_AR ^{Note 3}
Pch ^{Note 2}
Tch
Tstg
Preliminary Datasheet
R07DS0209EJ0300
Rev.3.00
Feb 23, 2012
2
D
1. Gate
2. Drain
3. Source
S
3
Value
100
20
25
100
25
15
22.5
25
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
mJ
W
C
C
R07DS0209EJ0300 Rev.3.00
Feb 23, 2012
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