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H7N1004FM_12 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N-Channel MOSFET High-Speed Power Switching | |||
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H7N1004FM
Silicon N-Channel MOSFET
High-Speed Power Switching
Features
ï· Low on-resistance
ï· RDS(on) = 25 mï typ.
ï· Low drive current
ï· Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM )
1G
123
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
3. Value at Tch = 25ï°C, Rg ï³ 50 ï
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Preliminary Datasheet
R07DS0209EJ0300
Rev.3.00
Feb 23, 2012
2
D
1. Gate
2. Drain
3. Source
S
3
Value
100
ï±20
25
100
25
15
22.5
25
150
â55 to +150
(Ta = 25ï°C)
Unit
V
V
A
A
A
A
mJ
W
ï°C
ï°C
R07DS0209EJ0300 Rev.3.00
Feb 23, 2012
Page 1 of 7
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