H7N1004DL Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N-Channel MOSFET High-Speed Power Switching

H7N1004DL, H7N1004DS
Silicon N-Channel MOSFET
High-Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 25 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
REJ03G1482-0100
Rev.1.00
Nov 07, 2006
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-2)
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK-(S))
D
12 ₃
H7N0607DL
12 ₃
H7N0607DS
G
S
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_D (pulse)^Note1
I_DR
I_AP ^{Note 3}
E_AR ^{Note 3}
Pch ^{Note 2}
Tch
Tstg
Value
100
±20
25
75
75
15
22.5
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.1.00 Nov 07, 2006 page 1 of 8