H7N1004AB Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H7N1004AB
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_{DS (on)} =25 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB )
4
G
123
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 ms, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
I_AP ^Note2
E_AR ^Note2
Pch ^Note3
Tch
Tstg
REJ03G1579-0100
Rev.1.00
Sep 03, 2007
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
100
±20
30
100
30
15
22.5
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
REJ03G1579-0100 Rev.1.00 Sep 03, 2007
Page 1 of 7