H7N1002LD_09 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

Preliminary
H7N1002LD, H7N1002LS, H7N1002LM
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_{DS (on)} = 8 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
REJ03G1131-0800
Rev.8.00
Nov 13, 2009
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L)
4
: PRSS0004AE-B
: LDPAK (S)-(1) )
4
: PRSS0004AE-C
: LDPAK (S)-(2) )
4
123
H7N1002LD
123
H7N1002LS
G
123
H7N1002LM
D
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^{Note 1}
I_DR
I_AP ^{Note 3}
E_AR ^{Note 3}
Pch ^{Note 2}
Tch
Tstg
Value
100
±20
75
300
75
50
166
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
REJ03G1131-0800 Rev.8.00 Nov 13, 2009
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