H7N0608LD Datasheet, PDF (1/12 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H7N0608LD, H7N0608LS, H7N0608LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0144-0100Z
Rev.1.00
Oct.30.2003
Features
• Low on-resistance
R_DS(on) = 6.0 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
LDPAK
D
G
S
4
4
4
1
2
3
1
2
3
1
2
H7N0608LS H7N0608LM
3
H7N0608LD
1. Gate
2. Drain
3. Source
4. Drain
Rev.1.00, Oct.30.2003, page 1 of 11