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| H7N0608FM Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching | |||
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H7N0608FM
Silicon N Channel MOS FET
Power Switching
Features
⢠Low on-resistance
RDS(on) = 6.5 m⦠typ.
⢠Low drive current
⢠4.5 V gate drive device can be driven from 5 V source
Outline
TO-220FM
REJ03G0165-0100Z
Rev.1.00
Dec.04.2003
D
G
S
123
1. Gate
2. Drain
3. Source
Rev.1.00, Dec.04.2003, page 1 of 9
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