H7N0607DL Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H7N0607DL, H7N0607DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 26 mΩ typ.
• Low drive current.
• Capable of 4.5 V gate drive
Outline
REJ03G0124-0300
Rev.3.00
Jan.27.2005
PRSS0004ZD-B
PRSS0004ZD-C
(Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D
4
4
1. Gate
2. Drain
G
3. Source
12 ₃
4. Drain
S
12 ₃
H7N0607DS
H7N0607DL
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_D (pulse)^Note1
I_DR
I_AP ^Note3
E_AR ^Note3
Pch^Note2
Tch
Tstg
Rating
60
±20
20
80
20
8
5.48
25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mj
W
°C
°C
Rev.3.00, Jan.27.2005, page 1 of 8