H7N0603DL Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H7N0603DL, H7N0603DS
Silicon N Channel MOS FET
High speed power Switching
Features
• Low on - resistance
R_DS (on) = 11 mΩ typ.
• Low drive current
• Capable of 4.5 gate drive
Outline
REJ03G0123-0200
Rev.2.00
Jan.26.2005
PRSS0004ZD-B
PRSS0004ZD-C
(Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D
4
4
1. Gate
2. Drain
3. Source
G
12 ₃
4. Drain
H7N0603DS
S
12 ₃
H7N0603DL
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Tch = 25°C, Rg ≥ 50Ω
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
I_APNote3
E_ARNote3
Pch^Note2
Tch
Tstg
Ratings
60
±20
30
120
30
25
53.6
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.2.00, Jan.26.2005, page 1 of 8