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H7N0602LD Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching
H7N0602LD, H7N0602LS, H7N0602LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1130-0600
Rev.6.00
Oct 16, 2006
Features
• Low on-resistance
RDS (on) = 4.1 mΩ typ.
• 4.5 V gate drive devices
• High Speed Switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N0602LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
H7N0602LS
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
S
H7N0602LM
Rev.6.00 Oct 16, 2006 page 1 of 8