H7N0312LD_06 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H7N0312LD, H7N0312LS, H7N0312LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1128-0300
(Previous: ADE-208-1572A)
Rev.3.00
Apr 07, 2006
Features
• Low on-resistance
R_{DS (on)} = 2.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N0312LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H7N0312LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
S
H7N0312LM
Rev.3.00 Apr 07, 2006 page 1 of 7