H7N0312AB_05 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H7N0312AB
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_{DS (on)} = 2.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
123
G
S
REJ03G1127-0400
(Previous: ADE-208-1571B)
Rev.4.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.4.00 Sep 07, 2005 page 1 of 6