H7N0308CF Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

H7N0308CF
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_{DS (on)} = 3.8 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
D
G
123
S
REJ03G1123-0300
(Previous: ADE-208-1570A)
Rev.3.00
Sep 07, 2005
1. Gate
2. Drain
3. Source
Rev.3.00 Sep 07, 2005 page 1 of 3