H5N6001P_05 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N6001P
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
• Low gate charge (Qg)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1
2
3
G
S
REJ03G1118-0300
(Previous: ADE-208-1425A)
Rev.3.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.3.00 Sep 07, 2005 page 1 of 6