H5N5012P Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N5012P
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
• Built-in fast recovery diode
Outline
TO-3P
D
G
S
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
1
2
3
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_APNote3
Pch ^Note2
θch-c
Tch
Tstg
REJ03G0378-0200Z
Rev.2.00
Jun.17.2004
1. Gate
2. Drain (Flange)
3. Source
Ratings
500
±30
25
100
25
7
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
Rev.2.00, Jun.17.2004, page 1 of 3