H5N5006DL Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N5006DL, H5N5006DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance: R_DS(on) = 2.5 Ω typ.
• Low leakage current: I_DSS = 1 µA max. (at V_DS = 500 V)
• High speed switching: t_f = 15 ns typ. (at V_GS = 10 V, V_DD ≅ 250 V, I_D = 1.5 A)
• Low gate charge: Qg = 14 nC typ. (at V_DD = 400 V, V_GS = 10 V, I_D = 3 A)
• Avalanche ratings
Outline
REJ03G0397-0100
Rev.1.00
May 30, 2006
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_DR
I_{DR (pulse)} ^Note1
I_APNote3
Pch ^Note2
θch-c
Tch
Tstg
Ratings
500
±30
3
12
3
12
3
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
Rev.1.00, May 30, 2006, page 1 of 7