H5N5005PL Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N5005PL
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance: R_DS(on) = 0.070 Ω typ.
• Low leakage current: I_DSS = 10 µA max (at V_DS = 500 V)
• High speed switching: t_f = 300 ns typ (at V_GS = 10 V, I_D = 30 A, R_L = 8.33 Ω)
• Low gate charge: Qg = 300 nC typ (at V_DD = 400 V, V_GS = 10 V, I_D = 60 A)
• Avalanche ratings
• Built-in fast recovery diode: t_rr = 220 ns typ
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
REJ03G0419-0300
Rev.3.00
May 25, 2006
G
1
2
3
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_DR
I_{DR (pulse)} ^Note1
I_AP ^Note3
Pch ^Note2
θch-c
Tch
Tstg
1. Gate
2. Drain (Flange)
3. Source
S
Ratings
500
±30
60
240
60
240
30
270
0.463
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
Rev.3.00, May 25, 2006 page 1 of 6