H5N5005PL-E0-E_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 500V - 60A - MOS FET High Speed Power Switching

H5N5005PL-E0-E
500V - 60A - MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.070 Ω typ. (at I_D = 30 A, V_GS= 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
• Low gate charge
• Avalanche ratings
• Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0003ZC-A
(Package name:TO-264)
G
1
2
3
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_DR
I_{DR (pulse)} ^Note1
I_AP ^Note3
Pch ^Note2
θch-c
Tch
Tstg
Preliminary Datasheet
R07DS1199EJ0300
Rev.3.00
Mar 25, 2014
D
1. Gate
2. Drain
3. Source
S
Ratings
500
±30
60
240
60
240
30
270
0.463
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
R07DS1199EJ0300 Rev.3.00
Mar 25, 2014
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