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| H5N5004PL_05 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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H5N5004PL
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance: R DS (on) = 0.09 ⦠typ.
⢠Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
⢠High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A)
⢠Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A)
⢠Avalanche ratings
⢠Built-in fast recovery diode: trr = 190 ns typ
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
REJ03G1113-0200
(Previous: ADE-208-1381)
Rev.2.00
Sep 07, 2005
1
2
3
G
S
1. Gate
2. Drain (Flange)
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 3
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