H5N5004PL Datasheet, PDF (1/5 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N5004PL
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1381 (Z)
Target Specification 1st. Edition
Mar. 2001
Features
• Low on-resistance: R_DS(on) = 0.09 Ω typ.
• Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
• High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A)
• Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A)
• Avalanche ratings
• Built-in fast recovery diode: trr = 190 ns typ
Outline
TO-3PL
D
G
1
2
3
1. Gate
2. Drain (Flange)
3. Source
S