 English |
|
|
|
|
|
|
|
| H5N5001FM_05 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
| |||
|
H5N5001FM
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance: R DS (on) =1.1 ⦠typ.
⢠Low leakage current: IDSS =1 µA max (at VDS = 500 V)
⢠High speed switching: tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
⢠Low gate charge: Qg = 15nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
⢠Avalanche ratings
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
123
G
S
REJ03G1112-0200
(Previous: ADE-208-1380)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese